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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NGTB60N65FL2WG

NGTB60N65FL2WG

AMI Semiconductor / ON Semiconductor

  • NGTB60N65FL2WG
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See Product Specifications for product details.
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Part Number NGTB60N65FL2WG
Manufacturer AMI Semiconductor / ON Semiconductor
Description 650V/60A IGBT FSII
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Product parameter

Part Number NGTB60N65FL2WG
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - IGBTs - Single
Description 650V/60A IGBT FSII
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 13483 pcs
Datasheet NGTB60N65FL2WG.pdf
Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A
Test Condition 400V, 60A, 10 Ohm, 15V
Td (on/off) @ 25°C 117ns/265ns
Switching Energy 1.59mJ (on), 660µJ (off)
Supplier Device Package TO-247-3
Series -
Reverse Recovery Time (trr) 96ns
Power - Max 595W
Packaging Tube
Package / Case TO-247-3
Other Names NGTB60N65FL2WGOS
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type Field Stop
Gate Charge 318nC
Detailed Description IGBT Field Stop 650V 100A 595W Through Hole TO-247-3
Current - Collector Pulsed (Icm) 240A
Current - Collector (Ic) (Max) 100A
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