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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NTHS2101PT1G

NTHS2101PT1G

AMI Semiconductor / ON Semiconductor

  • NTHS2101PT1G
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Part Number NTHS2101PT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 8V 5.4A CHIPFET
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock
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Product parameter

Part Number NTHS2101PT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 8V 5.4A CHIPFET
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4103 pcs
Datasheet NTHS2101PT1G.pdf
Vgs(th) (Max) @ Id 1.5V @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package ChipFET™
Series -
Rds On (Max) @ Id, Vgs 25 mOhm @ 5.4A, 4.5V
Power Dissipation (Max) 1.3W (Ta)
Packaging Tape & Reel (TR)
Package / Case 8-SMD, Flat Lead
Other Names NTHS2101PT1GOS
NTHS2101PT1GOS-ND
NTHS2101PT1GOSTR
Operating Temperature -
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 6.4V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 8V
Detailed Description P-Channel 8V 5.4A (Tj) 1.3W (Ta) Surface Mount ChipFET™
Current - Continuous Drain (Id) @ 25°C 5.4A (Tj)
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