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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > ISL9N303AS3ST

ISL9N303AS3ST

AMI Semiconductor / ON Semiconductor

  • ISL9N303AS3ST
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Dowload ISL9N303AS3ST Datasheet
Part Number ISL9N303AS3ST
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 30V 75A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number ISL9N303AS3ST
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 75A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5681 pcs
Datasheet ISL9N303AS3ST.pdf
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB)
Series UltraFET™
Rds On (Max) @ Id, Vgs 3.2 mOhm @ 75A, 10V
Power Dissipation (Max) 215W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 172nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 75A (Tc) 215W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
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