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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > FDS8870_G

FDS8870_G

AMI Semiconductor / ON Semiconductor

  • FDS8870_G
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Part Number FDS8870_G
Manufacturer AMI Semiconductor / ON Semiconductor
Description INTEGRATED CIRCUIT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock
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Product parameter

Part Number FDS8870_G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description INTEGRATED CIRCUIT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5384 pcs
Datasheet FDS8870_G.pdf
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series PowerTrench®
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 18A, 10V
Power Dissipation (Max) 2.5W (Ta)
Packaging Bulk
Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 4615pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
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