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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NTD6600N-1G

NTD6600N-1G

AMI Semiconductor / ON Semiconductor

  • NTD6600N-1G
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Dowload NTD6600N-1G Datasheet
Part Number NTD6600N-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 100V 12A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number NTD6600N-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 12A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4126 pcs
Datasheet NTD6600N-1G.pdf
Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package I-PAK
Series -
Rds On (Max) @ Id, Vgs 146 mOhm @ 6A, 5V
Power Dissipation (Max) 1.28W (Ta), 56.6W (Tc)
Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V
Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
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