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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > HGTG5N120BND

HGTG5N120BND

AMI Semiconductor / ON Semiconductor

  • HGTG5N120BND
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Dowload HGTG5N120BND Datasheet
Part Number HGTG5N120BND
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 21A 167W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number HGTG5N120BND
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - IGBTs - Single
Description IGBT 1200V 21A 167W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 64845 pcs
Datasheet HGTG5N120BND.pdf
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A
Test Condition 960V, 5A, 25 Ohm, 15V
Td (on/off) @ 25°C 22ns/160ns
Switching Energy 450µJ (on), 390µJ (off)
Supplier Device Package TO-247
Series -
Reverse Recovery Time (trr) 65ns
Power - Max 167W
Packaging Tube
Package / Case TO-247-3
Other Names HGTG5N120BND-ND
HGTG5N120BNDFS
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type NPT
Gate Charge 53nC
Detailed Description IGBT NPT 1200V 21A 167W Through Hole TO-247
Current - Collector Pulsed (Icm) 40A
Current - Collector (Ic) (Max) 21A
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