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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NTMS4101PR2

NTMS4101PR2

AMI Semiconductor / ON Semiconductor

  • NTMS4101PR2
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Dowload NTMS4101PR2 Datasheet
Part Number NTMS4101PR2
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 20V 6.9A 8-SOIC
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
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Part Number NTMS4101PR2
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 6.9A 8-SOIC
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 129053 pcs
Datasheet NTMS4101PR2.pdf
Vgs(th) (Max) @ Id 450mV @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series -
Rds On (Max) @ Id, Vgs 19 mOhm @ 6.9A, 4.5V
Power Dissipation (Max) 1.38W (Tj)
Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names NTMS4101PR2OS
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 4.5V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 6.9A (Ta) 1.38W (Tj) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta)
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