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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NGTB15N60S1EG

NGTB15N60S1EG

AMI Semiconductor / ON Semiconductor

  • NGTB15N60S1EG
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Part Number NGTB15N60S1EG
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 30A 117W TO220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Product parameter

Part Number NGTB15N60S1EG
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - IGBTs - Single
Description IGBT 600V 30A 117W TO220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 74739 pcs
Datasheet NGTB15N60S1EG.pdf
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 15A
Test Condition 400V, 15A, 22 Ohm, 15V
Td (on/off) @ 25°C 65ns/170ns
Switching Energy 550µJ (on), 350µJ (off)
Supplier Device Package TO-220
Series -
Reverse Recovery Time (trr) 270ns
Power - Max 117W
Packaging Tube
Package / Case TO-220-3
Other Names NGTB15N60S1EG-ND
NGTB15N60S1EGOS
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type NPT
Gate Charge 88nC
Detailed Description IGBT NPT 600V 30A 117W Through Hole TO-220
Current - Collector Pulsed (Icm) 120A
Current - Collector (Ic) (Max) 30A
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