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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > FDI045N10A-F102

FDI045N10A-F102

AMI Semiconductor / ON Semiconductor

  • FDI045N10A-F102
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Dowload FDI045N10A-F102 Datasheet
Part Number FDI045N10A-F102
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 100V 120A I2PAK-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number FDI045N10A-F102
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 120A I2PAK-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 35873 pcs
Datasheet FDI045N10A-F102.pdf
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package I2PAK (TO-262)
Series PowerTrench®
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 100A, 10V
Power Dissipation (Max) 263W (Tc)
Packaging Tube
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names FDI045N10A_F102
FDI045N10A_F102-ND
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 5270pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 120A (Tc) 263W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
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