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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NGTB40N60L2WG

NGTB40N60L2WG

AMI Semiconductor / ON Semiconductor

  • NGTB40N60L2WG
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See Product Specifications for product details.
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Dowload NGTB40N60L2WG Datasheet
Part Number NGTB40N60L2WG
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 80A 417W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Product parameter

Part Number NGTB40N60L2WG
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - IGBTs - Single
Description IGBT 600V 80A 417W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 25900 pcs
Datasheet NGTB40N60L2WG.pdf
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.61V @ 15V, 40A
Test Condition 400V, 40A, 10 Ohm, 15V
Td (on/off) @ 25°C 98ns/213ns
Switching Energy 1.17mJ (on), 280µJ (off)
Supplier Device Package TO-247
Series -
Reverse Recovery Time (trr) 73ns
Power - Max 417W
Packaging Tube
Package / Case TO-247-3
Other Names NGTB40N60L2WGOS
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type Trench Field Stop
Gate Charge 228nC
Detailed Description IGBT Trench Field Stop 600V 80A 417W Through Hole TO-247
Current - Collector Pulsed (Icm) 160A
Current - Collector (Ic) (Max) 80A
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