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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NVD4815NT4G

NVD4815NT4G

AMI Semiconductor / ON Semiconductor

  • NVD4815NT4G
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Part Number NVD4815NT4G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 30V 6.9A DPAK-4
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number NVD4815NT4G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 6.9A DPAK-4
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4270 pcs
Datasheet NVD4815NT4G.pdf
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package DPAK
Series -
Rds On (Max) @ Id, Vgs 15 mOhm @ 30A, 10V
Power Dissipation (Max) 1.26W (Ta), 32.6W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta), 35A (Tc)
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