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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NSBC124EDXV6T1G

NSBC124EDXV6T1G

AMI Semiconductor / ON Semiconductor

  • NSBC124EDXV6T1G
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Dowload NSBC124EDXV6T1G Datasheet
Part Number NSBC124EDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2NPN PREBIAS 0.5W SOT563
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock
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Product parameter

Part Number NSBC124EDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2NPN PREBIAS 0.5W SOT563
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 529277 pcs
Datasheet NSBC124EDXV6T1G.pdf
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package SOT-563
Series -
Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 22 kOhms
Power - Max 500mW
Packaging Original-Reel®
Package / Case SOT-563, SOT-666
Other Names NSBC124EDXV6T1GOSDKR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Part Number NSBC1*
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