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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NGTB03N60R2DT4G

NGTB03N60R2DT4G

AMI Semiconductor / ON Semiconductor

  • NGTB03N60R2DT4G
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Dowload NGTB03N60R2DT4G Datasheet
Part Number NGTB03N60R2DT4G
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 9A 600V DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number NGTB03N60R2DT4G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - IGBTs - Single
Description IGBT 9A 600V DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 172292 pcs
Datasheet NGTB03N60R2DT4G.pdf
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 3A
Test Condition 300V, 3A, 30 Ohm, 15V
Td (on/off) @ 25°C 27ns/59ns
Switching Energy 50µJ (on), 27µJ (off)
Supplier Device Package DPAK
Series -
Reverse Recovery Time (trr) 65ns
Power - Max 49W
Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names NGTB03N60R2DT4GOSTR
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type -
Gate Charge 17nC
Detailed Description IGBT 600V 9A 49W Surface Mount DPAK
Current - Collector Pulsed (Icm) 12A
Current - Collector (Ic) (Max) 9A
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