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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > FGA70N30TDTU

FGA70N30TDTU

AMI Semiconductor / ON Semiconductor

  • FGA70N30TDTU
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Dowload FGA70N30TDTU Datasheet
Part Number FGA70N30TDTU
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 300V 201W TO3P
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Product parameter

Part Number FGA70N30TDTU
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - IGBTs - Single
Description IGBT 300V 201W TO3P
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4332 pcs
Datasheet FGA70N30TDTU.pdf
Voltage - Collector Emitter Breakdown (Max) 300V
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 20A
Test Condition -
Td (on/off) @ 25°C -
Switching Energy -
Supplier Device Package TO-3PN
Series -
Reverse Recovery Time (trr) 21ns
Power - Max 201W
Packaging Tube
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type Trench
Gate Charge 125nC
Detailed Description IGBT Trench 300V 201W Through Hole TO-3PN
Current - Collector Pulsed (Icm) 160A
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