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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NDD60N745U1-1G

NDD60N745U1-1G

AMI Semiconductor / ON Semiconductor

  • NDD60N745U1-1G
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Dowload NDD60N745U1-1G Datasheet
Part Number NDD60N745U1-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 6.8A IPAK-4
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number NDD60N745U1-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 6.8A IPAK-4
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5469 pcs
Datasheet NDD60N745U1-1G.pdf
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package I-PAK
Series -
Rds On (Max) @ Id, Vgs 745 mOhm @ 3.25A, 10V
Power Dissipation (Max) 84W (Tc)
Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 6.6A (Tc) 84W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc)
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