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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NVMFS5832NLWFT1G

NVMFS5832NLWFT1G

AMI Semiconductor / ON Semiconductor

  • NVMFS5832NLWFT1G
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Part Number NVMFS5832NLWFT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 40V 120A SO8FL
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number NVMFS5832NLWFT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 120A SO8FL
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 85130 pcs
Datasheet NVMFS5832NLWFT1G.pdf
Vgs(th) (Max) @ Id 2.4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Series -
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 20A, 10V
Power Dissipation (Max) 3.7W (Ta), 127W (Tc)
Packaging Tape & Reel (TR)
Package / Case 8-PowerTDFN
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 40V
Detailed Description N-Channel 40V 21A (Ta) 3.7W (Ta), 127W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C 21A (Ta)
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