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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NTB082N65S3F

NTB082N65S3F

AMI Semiconductor / ON Semiconductor

  • NTB082N65S3F
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Part Number NTB082N65S3F
Manufacturer AMI Semiconductor / ON Semiconductor
Description SUPERFET3 650V D2PAK PKG
Lead Free Status / RoHS Status
In Stock
Reference Price
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Product parameter

Part Number NTB082N65S3F
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description SUPERFET3 650V D2PAK PKG
Lead Free Status / RoHS Status
Quantity Available 14010 pcs
Datasheet NTB082N65S3F.pdf
Vgs(th) (Max) @ Id 5V @ 4mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263)
Series SuperFET® III
Rds On (Max) @ Id, Vgs 82 mOhm @ 20A, 10V
Power Dissipation (Max) 313W (Tc)
Packaging Cut Tape (CT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names NTB082N65S3FOSCT
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status Lead free
Input Capacitance (Ciss) (Max) @ Vds 3410pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Detailed Description N-Channel 650V 40A (Tc) 313W (Tc) Surface Mount D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
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