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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > FQE10N20LCTU

FQE10N20LCTU

AMI Semiconductor / ON Semiconductor

  • FQE10N20LCTU
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Dowload FQE10N20LCTU Datasheet
Part Number FQE10N20LCTU
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 4A TO-126
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number FQE10N20LCTU
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 4A TO-126
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 6033 pcs
Datasheet FQE10N20LCTU.pdf
Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-126
Series QFET®
Rds On (Max) @ Id, Vgs 360 mOhm @ 2A, 10V
Power Dissipation (Max) 12.8W (Tc)
Packaging Tube
Package / Case TO-225AA, TO-126-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Drain to Source Voltage (Vdss) 200V
Detailed Description N-Channel 200V 4A (Tc) 12.8W (Tc) Through Hole TO-126
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
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