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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NTD23N03R-1G

NTD23N03R-1G

AMI Semiconductor / ON Semiconductor

  • NTD23N03R-1G
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Dowload NTD23N03R-1G Datasheet
Part Number NTD23N03R-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 25V 3.8A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number NTD23N03R-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 3.8A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4937 pcs
Datasheet NTD23N03R-1G.pdf
Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package I-PAK
Series -
Rds On (Max) @ Id, Vgs 45 mOhm @ 6A, 10V
Power Dissipation (Max) 1.14W (Ta), 22.3W (Tc)
Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Other Names NTD23N03R-1GOS
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Drain to Source Voltage (Vdss) 25V
Detailed Description N-Channel 25V 3.8A (Ta), 17.1A (Tc) 1.14W (Ta), 22.3W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 17.1A (Tc)
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