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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NTGD4169FT1G

NTGD4169FT1G

AMI Semiconductor / ON Semiconductor

  • NTGD4169FT1G
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Dowload NTGD4169FT1G Datasheet
Part Number NTGD4169FT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 30V 2.6A 6-TSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number NTGD4169FT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 2.6A 6-TSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5368 pcs
Datasheet NTGD4169FT1G.pdf
Vgs(th) (Max) @ Id 1.5V @ 250µA
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
Supplier Device Package 6-TSOP
Series -
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.6A, 4.5V
Power Dissipation (Max) 900mW (Ta)
Packaging Tape & Reel (TR)
Package / Case SOT-23-6
Operating Temperature -25°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
FET Type N-Channel
FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 2.6A (Ta) 900mW (Ta) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
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