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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > SMUN5216DW1T1G

SMUN5216DW1T1G

AMI Semiconductor / ON Semiconductor

  • SMUN5216DW1T1G
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Part Number SMUN5216DW1T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2NPN PREBIAS 0.187W SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock
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Product parameter

Part Number SMUN5216DW1T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2NPN PREBIAS 0.187W SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 529070 pcs
Datasheet SMUN5216DW1T1G.pdf
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package SC-88/SC70-6/SOT-363
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 4.7 kOhms
Power - Max 187mW
Packaging Cut Tape (CT)
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names SMUN5216DW1T1GOSCT
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Part Number MUN52**DW1T
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