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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > 2SC5551AE-TD-E

2SC5551AE-TD-E

AMI Semiconductor / ON Semiconductor

  • 2SC5551AE-TD-E
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Part Number 2SC5551AE-TD-E
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN BIPO HI FREQ PCP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Product parameter

Part Number 2SC5551AE-TD-E
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - Bipolar (BJT) - RF
Description TRANS NPN BIPO HI FREQ PCP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 102895 pcs
Datasheet 2SC5551AE-TD-E.pdf
Voltage - Collector Emitter Breakdown (Max) 30V
Transistor Type NPN
Supplier Device Package PCP
Series -
Power - Max 1.3W
Packaging Cut Tape (CT)
Package / Case TO-243AA
Other Names 2SC5551AE-TD-EOSCT
Operating Temperature 150°C (TJ)
Noise Figure (dB Typ @ f) -
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gain -
Frequency - Transition 3.5GHz
Detailed Description RF Transistor NPN 30V 300mA 3.5GHz 1.3W Surface Mount PCP
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 50mA, 5V
Current - Collector (Ic) (Max) 300mA
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