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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > HGTG27N120BN

HGTG27N120BN

AMI Semiconductor / ON Semiconductor

  • HGTG27N120BN
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Part Number HGTG27N120BN
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 72A 500W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number HGTG27N120BN
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - IGBTs - Single
Description IGBT 1200V 72A 500W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 24431 pcs
Datasheet HGTG27N120BN.pdf
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 27A
Test Condition 960V, 27A, 3 Ohm, 15V
Td (on/off) @ 25°C 24ns/195ns
Switching Energy 2.2mJ (on), 2.3mJ (off)
Supplier Device Package TO-247
Series -
Power - Max 500W
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type NPT
Gate Charge 270nC
Detailed Description IGBT NPT 1200V 72A 500W Through Hole TO-247
Current - Collector Pulsed (Icm) 216A
Current - Collector (Ic) (Max) 72A
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