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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > FQPF9N25CYDTU

FQPF9N25CYDTU

AMI Semiconductor / ON Semiconductor

  • FQPF9N25CYDTU
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Dowload FQPF9N25CYDTU Datasheet
Part Number FQPF9N25CYDTU
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 250V 8.8A TO-220F
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number FQPF9N25CYDTU
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 8.8A TO-220F
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 64644 pcs
Datasheet FQPF9N25CYDTU.pdf
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220F-3 (Y-Forming)
Series QFET®
Rds On (Max) @ Id, Vgs 430 mOhm @ 4.4A, 10V
Power Dissipation (Max) 38W (Tc)
Packaging Tube
Package / Case TO-220-3 Full Pack, Formed Leads
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Detailed Description N-Channel 250V 8.8A (Tc) 38W (Tc) Through Hole TO-220F-3 (Y-Forming)
Current - Continuous Drain (Id) @ 25°C 8.8A (Tc)
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