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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > FQA8N90C-F109

FQA8N90C-F109

AMI Semiconductor / ON Semiconductor

  • FQA8N90C-F109
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Dowload FQA8N90C-F109 Datasheet
Part Number FQA8N90C-F109
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 8A TO-3P
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number FQA8N90C-F109
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 900V 8A TO-3P
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 46296 pcs
Datasheet FQA8N90C-F109.pdf
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PN
Series QFET®
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 4A, 10V
Power Dissipation (Max) 240W (Tc)
Packaging Tube
Package / Case TO-3P-3, SC-65-3
Other Names FQA8N90C_F109
FQA8N90C_F109-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 900V
Detailed Description N-Channel 900V 8A (Tc) 240W (Tc) Through Hole TO-3PN
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
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