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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > FDP039N08B-F102

FDP039N08B-F102

AMI Semiconductor / ON Semiconductor

  • FDP039N08B-F102
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Dowload FDP039N08B-F102 Datasheet
Part Number FDP039N08B-F102
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N CH 80V 120A TO-220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number FDP039N08B-F102
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 80V 120A TO-220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 32230 pcs
Datasheet FDP039N08B-F102.pdf
Vgs(th) (Max) @ Id 4.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220-3
Series PowerTrench®
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 100A, 10V
Power Dissipation (Max) 214W (Tc)
Packaging Tube
Package / Case TO-220-3
Other Names FDP039N08B_F102
FDP039N08B_F102-ND
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 9450pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 133nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 80V
Detailed Description N-Channel 80V 120A (Tc) 214W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
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