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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > 2SD1060S-1E

2SD1060S-1E

AMI Semiconductor / ON Semiconductor

  • 2SD1060S-1E
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Dowload 2SD1060S-1E Datasheet
Part Number 2SD1060S-1E
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 50V 5A
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Product parameter

Part Number 2SD1060S-1E
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Single
Description TRANS NPN 50V 5A
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 87583 pcs
Datasheet 2SD1060S-1E.pdf
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Transistor Type NPN
Supplier Device Package TO-220-3
Series -
Power - Max 1.75W
Packaging Tube
Package / Case TO-220-3
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 30MHz
Detailed Description Bipolar (BJT) Transistor NPN 50V 5A 30MHz 1.75W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 1A, 2V
Current - Collector Cutoff (Max) 100µA (ICBO)
Current - Collector (Ic) (Max) 5A
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