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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NGTB30N120L2WG

NGTB30N120L2WG

AMI Semiconductor / ON Semiconductor

  • NGTB30N120L2WG
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Dowload NGTB30N120L2WG Datasheet
Part Number NGTB30N120L2WG
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 60A 534W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Product parameter

Part Number NGTB30N120L2WG
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - IGBTs - Single
Description IGBT 1200V 60A 534W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 14959 pcs
Datasheet NGTB30N120L2WG.pdf
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Test Condition 600V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C 116ns/285ns
Switching Energy 4.4mJ (on), 1.4mJ (off)
Supplier Device Package TO-247
Series -
Reverse Recovery Time (trr) 450ns
Power - Max 534W
Packaging Tube
Package / Case TO-247-3
Other Names NGTB30N120L2WGOS
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type Trench Field Stop
Gate Charge 310nC
Detailed Description IGBT Trench Field Stop 1200V 60A 534W Through Hole TO-247
Current - Collector Pulsed (Icm) 120A
Current - Collector (Ic) (Max) 60A
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