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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > FGA40T65UQDF

FGA40T65UQDF

AMI Semiconductor / ON Semiconductor

  • FGA40T65UQDF
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Part Number FGA40T65UQDF
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 650V 80A 231W TO3PN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number FGA40T65UQDF
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - IGBTs - Single
Description IGBT 650V 80A 231W TO3PN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 47095 pcs
Datasheet FGA40T65UQDF.pdf
Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 1.67V @ 15V, 40A
Test Condition 400V, 40A, 6 Ohm, 15V
Td (on/off) @ 25°C 32ns/271ns
Switching Energy 989µJ (on), 310µJ (off)
Supplier Device Package TO-3PN
Series -
Reverse Recovery Time (trr) 89ns
Power - Max 231W
Packaging Tube
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type NPT
Gate Charge 306nC
Detailed Description IGBT NPT 650V 80A 231W Through Hole TO-3PN
Current - Collector Pulsed (Icm) 120A
Current - Collector (Ic) (Max) 80A
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