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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > MJW21196G

MJW21196G

AMI Semiconductor / ON Semiconductor

  • MJW21196G
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Dowload MJW21196G Datasheet
Part Number MJW21196G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 250V 16A TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Product parameter

Part Number MJW21196G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Single
Description TRANS NPN 250V 16A TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 38687 pcs
Datasheet MJW21196G.pdf
Voltage - Collector Emitter Breakdown (Max) 250V
Vce Saturation (Max) @ Ib, Ic 3V @ 3.2A, 16A
Transistor Type NPN
Supplier Device Package TO-247
Series -
Power - Max 200W
Packaging Tube
Package / Case TO-247-3
Other Names MJW21196GOS
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 4MHz
Detailed Description Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A, 5V
Current - Collector Cutoff (Max) 100µA
Current - Collector (Ic) (Max) 16A
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