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Home > Manufacturers > Diodes Incorporated > HBDM60V600W-7

HBDM60V600W-7

Diodes Incorporated

  • HBDM60V600W-7
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Dowload HBDM60V600W-7 Datasheet
Part Number HBDM60V600W-7
Manufacturer Diodes Incorporated
Description TRANS NPN/PNP 65V/60V SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number HBDM60V600W-7
Manufacturer Diodes Incorporated
Product Category Transistors - Bipolar (BJT) - Arrays
Description TRANS NPN/PNP 65V/60V SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 762754 pcs
Datasheet HBDM60V600W-7.pdf
Voltage - Collector Emitter Breakdown (Max) 65V, 60V
Vce Saturation (Max) @ Ib, Ic 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Transistor Type NPN, PNP
Supplier Device Package SOT-363
Series -
Power - Max 200mW
Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names HBDM60V600W7
HBDM60V600WDITR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 100MHz
Detailed Description Bipolar (BJT) Transistor Array NPN, PNP 65V, 60V 500mA, 600mA 100MHz 200mW Surface Mount SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V / 100 @ 150mA, 10V
Current - Collector Cutoff (Max) 100nA
Current - Collector (Ic) (Max) 500mA, 600mA
Base Part Number HBDM60V600
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