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Home > Manufacturers > Diodes Incorporated > ZXMN10A08DN8TA

ZXMN10A08DN8TA

Diodes Incorporated

  • ZXMN10A08DN8TA
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Dowload ZXMN10A08DN8TA Datasheet
Part Number ZXMN10A08DN8TA
Manufacturer Diodes Incorporated
Description MOSFET 2N-CH 100V 1.6A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number ZXMN10A08DN8TA
Manufacturer Diodes Incorporated
Product Category Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 100V 1.6A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 84866 pcs
Datasheet ZXMN10A08DN8TA.pdf
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Supplier Device Package 8-SO
Series -
Rds On (Max) @ Id, Vgs 250 mOhm @ 3.2A, 10V
Power - Max 1.25W
Packaging Cut Tape (CT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names ZXMN10A08DN8TACT
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Detailed Description Mosfet Array 2 N-Channel (Dual) 100V 1.6A 1.25W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 1.6A
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