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Home > Manufacturers > Diodes Incorporated > DMG4800LK3-13

DMG4800LK3-13

Diodes Incorporated

  • DMG4800LK3-13
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Dowload DMG4800LK3-13 Datasheet
Part Number DMG4800LK3-13
Manufacturer Diodes Incorporated
Description MOSFET N-CH 30V 10A TO252
Lead Free Status / RoHS Status Contains lead / RoHS Compliant
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Part Number DMG4800LK3-13
Manufacturer Diodes Incorporated
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 10A TO252
Lead Free Status / RoHS Status Contains lead / RoHS Compliant
Quantity Available 240208 pcs
Datasheet DMG4800LK3-13.pdf
Vgs(th) (Max) @ Id 1.6V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-252-3
Series -
Rds On (Max) @ Id, Vgs 17 mOhm @ 9A, 10V
Power Dissipation (Max) 1.71W (Ta)
Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names DMG4800LK3-13DITR
DMG4800LK313
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 798pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 10A (Ta) 1.71W (Ta) Surface Mount TO-252-3
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
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