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Home > Manufacturers > International Rectifier (Infineon Technologies) > IRF6706S2TR1PBF

IRF6706S2TR1PBF

International Rectifier (Infineon Technologies)

  • IRF6706S2TR1PBF
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Dowload IRF6706S2TR1PBF Datasheet
Part Number IRF6706S2TR1PBF
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 25V 17A DIRECTFET-S1
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Product parameter

Part Number IRF6706S2TR1PBF
Manufacturer International Rectifier (Infineon Technologies)
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 17A DIRECTFET-S1
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 77121 pcs
Datasheet IRF6706S2TR1PBF.pdf
Vgs(th) (Max) @ Id 2.35V @ 25µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package DIRECTFET S1
Series HEXFET®
Rds On (Max) @ Id, Vgs 3.8 mOhm @ 17A, 10V
Power Dissipation (Max) 1.8W (Ta), 26W (Tc)
Packaging Original-Reel®
Package / Case DirectFET™ Isometric S1
Other Names IRF6706S2TR1PBFDKR
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1810pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 25V
Detailed Description N-Channel 25V 17A (Ta), 63A (Tc) 1.8W (Ta), 26W (Tc) Surface Mount DIRECTFET S1
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 63A (Tc)
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