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Home > Manufacturers > International Rectifier (Infineon Technologies) > SI4435DYPBF

SI4435DYPBF

International Rectifier (Infineon Technologies)

  • SI4435DYPBF
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Part Number SI4435DYPBF
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET P-CH 30V 8A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number SI4435DYPBF
Manufacturer International Rectifier (Infineon Technologies)
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 8A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 135978 pcs
Datasheet SI4435DYPBF.pdf
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series HEXFET®
Rds On (Max) @ Id, Vgs 20 mOhm @ 8A, 10V
Power Dissipation (Max) 2.5W (Ta)
Packaging Tube
Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SP001569846
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V
Detailed Description P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
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