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Home > Manufacturers > Renesas Electronics America > NP82N04PDG-E1-AY

NP82N04PDG-E1-AY

Renesas Electronics America

  • NP82N04PDG-E1-AY
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Dowload NP82N04PDG-E1-AY Datasheet
Part Number NP82N04PDG-E1-AY
Manufacturer Renesas Electronics America
Description MOSFET N-CH 40V 82A TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock
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Part Number NP82N04PDG-E1-AY
Manufacturer Renesas Electronics America
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 82A TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4280 pcs
Datasheet NP82N04PDG-E1-AY.pdf
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263
Series -
Rds On (Max) @ Id, Vgs 3.5 mOhm @ 41A, 10V
Power Dissipation (Max) 1.8W (Ta), 143W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 40V
Detailed Description N-Channel 40V 82A (Tc) 1.8W (Ta), 143W (Tc) Surface Mount TO-263
Current - Continuous Drain (Id) @ 25°C 82A (Tc)
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