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Home > Manufacturers > Renesas Electronics America > NP36P04KDG-E1-AY

NP36P04KDG-E1-AY

Renesas Electronics America

  • NP36P04KDG-E1-AY
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Dowload NP36P04KDG-E1-AY Datasheet
Part Number NP36P04KDG-E1-AY
Manufacturer Renesas Electronics America
Description MOSFET P-CH 40V 36A TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock
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Part Number NP36P04KDG-E1-AY
Manufacturer Renesas Electronics America
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 40V 36A TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4053 pcs
Datasheet NP36P04KDG-E1-AY.pdf
Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263
Series -
Rds On (Max) @ Id, Vgs 17 mOhm @ 18A, 10V
Power Dissipation (Max) 1.8W (Ta), 56W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 40V
Detailed Description P-Channel 40V 36A (Tc) 1.8W (Ta), 56W (Tc) Surface Mount TO-263
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
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