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Home > Manufacturers > Renesas Electronics America > NP33N06YDG-E1-AY

NP33N06YDG-E1-AY

Renesas Electronics America

  • NP33N06YDG-E1-AY
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Dowload NP33N06YDG-E1-AY Datasheet
Part Number NP33N06YDG-E1-AY
Manufacturer Renesas Electronics America
Description MOSFET N-CH 60V 33A 8HSON
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number NP33N06YDG-E1-AY
Manufacturer Renesas Electronics America
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 33A 8HSON
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4026 pcs
Datasheet NP33N06YDG-E1-AY.pdf
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-HSON
Series -
Rds On (Max) @ Id, Vgs 14 mOhm @ 16.5A, 10V
Power Dissipation (Max) 1W (Ta), 97W (Tc)
Packaging Tape & Reel (TR)
Package / Case 8-SMD, Flat Lead Exposed Pad
Other Names NP33N06YDG-E1-AY-ND
NP33N06YDG-E1-AYTR
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 33A (Tc) 1W (Ta), 97W (Tc) Surface Mount 8-HSON
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
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