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Home > Manufacturers > STMicroelectronics > STW58N65DM2AG

STW58N65DM2AG

STMicroelectronics

  • STW58N65DM2AG
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Dowload STW58N65DM2AG Datasheet
Part Number STW58N65DM2AG
Manufacturer STMicroelectronics
Description MOSFET N-CH 650V 48A
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number STW58N65DM2AG
Manufacturer STMicroelectronics
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 48A
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 11900 pcs
Datasheet STW58N65DM2AG.pdf
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247
Series Automotive, AEC-Q101, MDmesh™ DM2
Rds On (Max) @ Id, Vgs 65 mOhm @ 24A, 10V
Power Dissipation (Max) 360W (Tc)
Packaging Tube
Package / Case TO-247-3
Other Names 497-16137-5
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Detailed Description N-Channel 650V 48A (Tc) 360W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
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