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Home > Manufacturers > STMicroelectronics > SCT10N120

SCT10N120

STMicroelectronics

  • SCT10N120
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Dowload SCT10N120 Datasheet
Part Number SCT10N120
Manufacturer STMicroelectronics
Description MOSFET N-CH 1.2KV TO247-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number SCT10N120
Manufacturer STMicroelectronics
Product Category Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1.2KV TO247-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 8947 pcs
Datasheet SCT10N120.pdf
Vgs(th) (Max) @ Id 3.5V @ 250µA
Vgs (Max) +25V, -10V
Technology SiCFET (Silicon Carbide)
Supplier Device Package HiP247™
Series -
Rds On (Max) @ Id, Vgs 690 mOhm @ 6A, 20V
Power Dissipation (Max) 150W (Tc)
Packaging Tube
Package / Case TO-247-3
Other Names 497-16597-5
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 20V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200V
Detailed Description N-Channel 1200V 12A (Tc) 150W (Tc) Through Hole HiP247™
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
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