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Home > Manufacturers > STMicroelectronics > STGWA80H65DFB

STGWA80H65DFB

STMicroelectronics

  • STGWA80H65DFB
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Part Number STGWA80H65DFB
Manufacturer STMicroelectronics
Description IGBT BIPO 650V 80A TO247-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Part Number STGWA80H65DFB
Manufacturer STMicroelectronics
Product Category Transistors - IGBTs - Single
Description IGBT BIPO 650V 80A TO247-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 16779 pcs
Datasheet STGWA80H65DFB.pdf
Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
Test Condition 400V, 80A, 10 Ohm, 15V
Td (on/off) @ 25°C 84ns/280ns
Switching Energy 2.1mJ (on), 1.5mJ (off)
Supplier Device Package TO-247 Long Leads
Series -
Reverse Recovery Time (trr) 85ns
Power - Max 469W
Packaging Tube
Package / Case TO-247-3
Other Names 497-16007-5
STGWA80H65DFB-ND
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type Trench Field Stop
Gate Charge 414nC
Detailed Description IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247 Long Leads
Current - Collector Pulsed (Icm) 240A
Current - Collector (Ic) (Max) 120A
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